TDIAM SB RAS

Novosibirsk Division of Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS “Technological Design Institute of Applied Microelectronics”
Registered organization name:
Novosibirsk Division of Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS "Technological Design Institute of Applied Microelectronics"
Physics
TDIAM SB RAS
2/1, Ac. Lavrentieva ave., Novosibirsk, Russia, 630090
Phone:+7(383) 330-65-59
Fax:+7(383) 316-57-26
Date of editing information: 22.12.2011
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Chief manager of Data Base: Elena Rychkova, e-mail: helen@ict.nsc.ru